AOD1R4A70/aoi1r4a70 700v, a mos tm n-channel power transistor general description product summary v ds @ t j,max 800v i dm 15a r ds(on),max < 1.4 q g,typ 8nc e oss @ 400v 1 m j applications 100% uis tested 100% r g tested symbol v ds v gs v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc gate-source voltage (dynamic) ac( f>1hz) 3 0 v tube 3500 maximum case-to-sink a c/w c/w c/w maximum junction-to-ambient a,d maximum junction-to-case 45 55 2 2.6 - 0.5 units junction and storage temperature range -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds typical maximum thermal characteristics parameter 300 c c v orderable part number form minimum order quantity absolute maximum ratings t a =25c unless otherwise noted 20 v ? proprietary a mos5 tm technology ? low r ds(on) ? optimized switching parameters for better emi performance ? enhanced body diode for robustness and fast reverse recovery ? flyback for smps ? charger, adapter, lighting 100 v/ns parameter drain-source voltage i d a 1.1 15 0.6 gate-source voltage 700 units maximum 20 t c =25c power dissipation b 48 0.4 package type avalanche current c t c =100c continuous drain current repetitive avalanche energy c single pulsed avalanche energy h AOD1R4A70 to252 tape & reel 2500 aoi1r4a70 to251a mj dv/dt derate above 25c a mosfet dv/dt ruggedness peak diode recovery dv/dt mj 2.7 3.8 t c =25c p d w w/c pulsed drain current c 2.4 g d s g s d g s d top view to252 bottom view AOD1R4A70 g g d d s s top view bottom view to - 251a aoi1r4a70 s d d g s d d d rev.1.0: june 2018 www.aosmd.com page 1 of 6 downloaded from: http:///
AOD1R4A70/aoi1r4a70 symbol min typ max units 700 - - - 800 - bv dss /?tj - 0.59 - v/ o c - - 1 - - 10 i gss - - 100 na v gs(th) gate threshold voltage 2.9 3.5 4.1 v r ds(on) - 1.16 1.4 g fs - 1.8 - s v sd - 0.8 1.2 v i s - - 3.8 a i sm - - 15 a c iss - 354 - pf c oss - 12 - pf c o(er) - 11.2 - pf c o(tr) - 46.9 - pf c rss - 1.3 - pf r g - 7.3 - q g - 8 nc q gs - 2 - nc q gd - 2 - nc t d(on) - 15 - ns t r - 7.5 - ns t d(off) - 32 - ns t f - 13.5 - ns t rr - 176 - ns i rm - 11 - a q rr - 1.4 - m c applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. body diode reverse recovery charge body diode reverse recovery time turn-off delaytime turn-off fall time v gs =10v, v ds =400v, i d =1.9a, r g =5 w turn-on rise time turn-on delaytime peak reverse recovery current i f =1.9a, di/dt=100a/ m s, v ds =400v v ds =10v, i d =1a v gs =10v, i d =1a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz static drain-source on-resistance bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =700v, v gs =0v m a v ds =560v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h effective output capacitance, time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz v ds =0v, v gs =20v gate-body leakage current v gs =10v, v ds =480v, i d =1.9a total gate charge gate source charge gate drain charge switching parameters a. the value of r q ja is measured with the device in a still air environment with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction- to -case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperatur e t j(max) =150 c, ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained us ing <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. g. these tests are performed with the device mounted on 1 in2 fr-4 board with 2oz. copper, in a still air environment with ta =25 c . h. l=60mh, i as =0.3 a, r g =25 ?, starting t j =25 c. i. c o(er) is a fixed capacitance that gives the same stored ener gy as c oss while v ds is rising from 0 to 80% v (br)dss. j. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. rev.1.0: june 2018 www.aosmd.com page 2 of 6 downloaded from: http:///
AOD1R4A70/aoi1r4a70 typical electrical and thermal characteristics 0 0.7 1.4 2.1 2.8 3.5 0 1 2 3 4 5 r ds(on) ( w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1e - 04 1e - 03 1e - 02 1e - 01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0 0.5 1 1.5 2 2.5 3 - 100 - 50 0 50 100 150 200 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature v gs =10v i d =1a v gs =10v 0 1 2 3 4 5 0 5 10 15 20 i d (a) v ds (volts) figure 1: on-region characteristics v gs =4.5v 5v 5.5v 10v 8v 6v 0.7 0.8 0.9 1 1.1 1.2 1.3 - 100 - 50 0 50 100 150 200 bv dss (normalized) t j ( c) figure 5: break down vs. junction temparature 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =10v 25 c 125 c rev.1.0: june 2018 www.aosmd.com page 3 of 6 downloaded from: http:///
AOD1R4A70/aoi1r4a70 typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1 10 100 1000 10000 0 100 200 300 400 500 600 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =480v i d =1.9a 0 1 2 3 4 5 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 10: current de-rating (note f) 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for aod(i)1r4a70 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 100 200 300 400 500 eoss (uj) v ds (volts) figure 9: coss stored energy e oss rev.1.0: june 2018 www.aosmd.com page 4 of 6 downloaded from: http:///
AOD1R4A70/aoi1r4a70 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance for aod(i)1r4a70 ( note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm rev.1.0: june 2018 www.aosmd.com page 5 of 6 downloaded from: http:///
AOD1R4A70/aoi1r4a70 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.1.0: june 2018 www.aosmd.com page 6 of 6 downloaded from: http:///
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